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Intel, like Samsung, is expected to announce that it uses a much larger process node for its 3D NAND. In Samsung’s case, it uses a 40nm process for 3D NAND, despite the fact that its working on 14nm planar technology for both logic and DRAM devices. Intel and Micron have already launched 16nm 2D NAND, but the fundamental characteristics of flash mean that device reliability decreases as process nodes shrink.
Moving back up to 40nm NAND gave Samsung enough headroom to launch the fastest, most reliable SSD on the market today — the 850 Pro — and it’s expected to give Intel a similar kick. Intel isn’t willing to put a strict timetable on its plans for a 10TB SSD (and you can expect any such device to debut with an enterprise-class price tag), but Samsung has talked about stacking over a hundred layers of NAND per die — and if Intel hits equivalent densities, a 10TB SSD should be possible within five years.
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A 10TB SSD is a lot of space.
Moving back up to 40nm NAND gave Samsung enough headroom to launch the fastest, most reliable SSD on the market today — the 850 Pro — and it’s expected to give Intel a similar kick. Intel isn’t willing to put a strict timetable on its plans for a 10TB SSD (and you can expect any such device to debut with an enterprise-class price tag), but Samsung has talked about stacking over a hundred layers of NAND per die — and if Intel hits equivalent densities, a 10TB SSD should be possible within five years.
Read More
A 10TB SSD is a lot of space.
